PART |
Description |
Maker |
2DC2412R-7 2DC2412R |
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Vishay Siliconix Diodes
|
CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五(巴西)总裁| 100mA的一(c)|2VAR
|
Amphenol, Corp.
|
DTA143ZA DTA115TF DTA115TA DTC124TA DTA124TA DTA11 |
Digital Transistor 晶体管| 50V五(巴西)总裁| 100mA的一c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五(巴西)总裁| 100mA的一(c)|律师- 71 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 100mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 600MA I(C) | SOT-23VAR TRANSISTOR | 600MA I(C) | SIP TRANSISTOR | 600MA I(C) | SC-71
|
Rohm Unisonic Technologies Co., Ltd.
|
CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一c)| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (50V, 0.5A) From old datasheet system Medium Power Transistor (50V/ 0.5A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五(巴西)总裁| 500mA的一(c)| SPAK
|
Rohm
|
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
DTA114YCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
Rohm
|
DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
2SC3623-T 2SC3623-T/JM 2SC3623A-T 2SC3623A-T/JM 2S |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK Silicon transistor
|
NEC
|
ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers ETC GHz Technology
|